III-Phosphide and III-Arsenide flip chip light-emitting devices
文献类型：专利
| 作者 | CAMRAS, MICHAEL D.; STEIGERWALD, DANIEL A.; STERANKA, FRANK M.; LUDOWISE, MICHAEL J.; MARTIN, PAUL S.; KRAMES, MICHAEL R.; KISH, FRED A.; STOCKMAN, STEPHEN A. |
| 专利号 | US20040227148A1 |
| 著作权人 | LUMILEDS LLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | III-Phosphide and III-Arsenide flip chip light-emitting devices |
| 英文摘要 | A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example. |
| 公开日期 | 2004-11-18 |
| 申请日期 | 2004-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43489]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LLC |
| 推荐引用方式 GB/T 7714 | CAMRAS, MICHAEL D.,STEIGERWALD, DANIEL A.,STERANKA, FRANK M.,et al. III-Phosphide and III-Arsenide flip chip light-emitting devices. US20040227148A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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