Transferring semiconductor crystal from a substrate to a resin
文献类型：专利
| 作者 | OOHATA, TOYOHARU |
| 专利号 | US20040259282A1 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Transferring semiconductor crystal from a substrate to a resin |
| 英文摘要 | A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin. |
| 公开日期 | 2004-12-23 |
| 申请日期 | 2004-07-20 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | OOHATA, TOYOHARU. Transferring semiconductor crystal from a substrate to a resin. US20040259282A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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