Nitride semiconductor light-emitting device and process for producing the same
文献类型：专利
| 作者 | CHO, DONG HYUN; KOIKE, MASAYOSHI; IMAI, YUJI; KIM, MIN HO; OH, BANG WON; HAHM, HUN JOO |
| 专利号 | US20050218416A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor light-emitting device and process for producing the same |
| 英文摘要 | Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same. |
| 公开日期 | 2005-10-06 |
| 申请日期 | 2004-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | CHO, DONG HYUN,KOIKE, MASAYOSHI,IMAI, YUJI,et al. Nitride semiconductor light-emitting device and process for producing the same. US20050218416A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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