Light-emitting diode and process for producing the same
文献类型：专利
| 作者 | ASAI, MAKOTO; YAMAZAKI, SHIRO; KOZAWA, TAKAHIRO; NARUKAWA, MITSUHISA |
| 专利号 | US20060273324A1 |
| 著作权人 | ASAI MAKOTO |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting diode and process for producing the same |
| 英文摘要 | The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched. |
| 公开日期 | 2006-12-07 |
| 申请日期 | 2004-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43493]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ASAI MAKOTO |
| 推荐引用方式 GB/T 7714 | ASAI, MAKOTO,YAMAZAKI, SHIRO,KOZAWA, TAKAHIRO,et al. Light-emitting diode and process for producing the same. US20060273324A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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