Method of making group III nitride-based compound semiconductor
文献类型：专利
| 作者 | NAKAMURA, RYO |
| 专利号 | US20050026398A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. (50%) |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of making group III nitride-based compound semiconductor |
| 英文摘要 | A method of making a group III nitride-based compound semiconductor has the steps of: providing a semiconductor substrate with a polished surface, the semiconductor substrate being of group III nitride-based compound semiconductor; and growing a semiconductor epitaxial growth layer of group III nitride-based compound semiconductor on the semiconductor substrate. The polished surface is an inclined surface that has an off-angle θ of 0.15 degrees or more and 0.6 degrees or less to a-face, c-face or m-face of the semiconductor substrate. |
| 公开日期 | 2005-02-03 |
| 申请日期 | 2004-07-30 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43494]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. (50%) |
| 推荐引用方式 GB/T 7714 | NAKAMURA, RYO. Method of making group III nitride-based compound semiconductor. US20050026398A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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