Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip
文献类型：专利
| 作者 | BEHRES, ALEXANDER; LINDER, NORBERT; MAYER, BERND |
| 专利号 | US20050116242A1 |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS, GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip |
| 英文摘要 | A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second III/V compound semiconductor material system with a second group V element, which is different from the first group V element. At least one layer sequence with a first and a second III/V compound semiconductor material layer is applied to the substrate or to the buffer layer before the application of the epitaxial component layer sequence, the first and second III/V compound semiconductor material layers having different compositions from one another and containing both the first and the second group V elements. |
| 公开日期 | 2005-06-02 |
| 申请日期 | 2004-09-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43496]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS, GMBH |
| 推荐引用方式 GB/T 7714 | BEHRES, ALEXANDER,LINDER, NORBERT,MAYER, BERND. Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip. US20050116242A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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