Nitride-based light emitting device and method of manufacturing the same
文献类型：专利
| 作者 | SEONG, TAE-YEON; KIM, KYOUNG-KOOK; SONG, JUNE-O; LEEM, DONG-SEOK |
| 专利号 | US20050077537A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride-based light emitting device and method of manufacturing the same |
| 英文摘要 | Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode. |
| 公开日期 | 2005-04-14 |
| 申请日期 | 2004-10-05 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43497]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEONG, TAE-YEON,KIM, KYOUNG-KOOK,SONG, JUNE-O,et al. Nitride-based light emitting device and method of manufacturing the same. US20050077537A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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