Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride
文献类型：专利
| 作者 | KATONA THOMAS M; KELLER STACIA; ALEJANDRO PABLO CANTU |
| 专利号 | WO2005041269A3 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride |
| 英文摘要 | A method of maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride layers by crystal growth techniques, such as metalorganic chemical vapor deposition , Hydride Vapor Phase Epitaxy , other vapor phase transport techniques such as sublimation, and Molecular Beam Epitaxy . The process etches periodic patterns into a suitable material, such as aluminum nitride and high aluminum composition A1GaN base layers heteroepitaxially grown on a substrate or a substrate itself (step 18) A lateral epitaxial overgrowth is performed of the A1N or high aluminum composition aluminum gallium nitride layers on the suitable material. Lateral epitaxial overgrowth of the A1N or high aluminum composition aluminum gallium nitride layers may be enhanced using low V/III ratios and fast growth rates (step 20). The process reduces the threading dislocation density in high A1 containing nitrides by several orders of magnitude. |
| 公开日期 | 2006-03-30 |
| 申请日期 | 2004-10-25 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | KATONA THOMAS M,KELLER STACIA,ALEJANDRO PABLO CANTU. Maskless lateral epitaxial overgrowth of aluminum nitride and high aluminum composition aluminum gallium nitride. WO2005041269A3. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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