Manufacture of a semiconductor device
文献类型：专利
| 作者 | HOOPER, STEWART; BOUSQUET, VALERIE; JOHNSON, KATHERINE L.; HEFFERNAN, JONATHAN |
| 专利号 | US20050170537A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of a semiconductor device |
| 英文摘要 | A method of fabricating the active region of a semiconductor light-emitting device, in which the active region comprises a plurality of barrier layers (11,13,15,17) with each pair of barrier layers being separated by a quantum well layer (12,14,16), comprises annealing each barrier layer (11,13,15,17) separately. Each barrier layer (11,13,15,17) is annealed once it has been grown, and before a layer is grown over the barrier layer. A device grown by the method of the invention has a significantly higher optical power output than a device made by a convention fabrication process having a single annealing step. |
| 公开日期 | 2005-08-04 |
| 申请日期 | 2004-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43499]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOOPER, STEWART,BOUSQUET, VALERIE,JOHNSON, KATHERINE L.,et al. Manufacture of a semiconductor device. US20050170537A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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