Laser lift-off of sapphire from a nitride FLIP-chip
文献类型：专利
| 作者 | SHELTON BRYON S; LIBON SEBASTIAN; ELIASHEVICH IVAN |
| 专利号 | WO2005062905A3 |
| 著作权人 | GELCORE LLC |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser lift-off of sapphire from a nitride FLIP-chip |
| 英文摘要 | In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light. |
| 公开日期 | 2005-11-24 |
| 申请日期 | 2004-12-21 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43502]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GELCORE LLC |
| 推荐引用方式 GB/T 7714 | SHELTON BRYON S,LIBON SEBASTIAN,ELIASHEVICH IVAN. Laser lift-off of sapphire from a nitride FLIP-chip. WO2005062905A3. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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