Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device
文献类型：专利
| 作者 | HIROTA, RYU; NAKAHATA, SEIJI; UENO, MASAKI |
| 专利号 | US20050164419A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device |
| 英文摘要 | Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2. |
| 公开日期 | 2005-07-28 |
| 申请日期 | 2005-01-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43504]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HIROTA, RYU,NAKAHATA, SEIJI,UENO, MASAKI. Group III Nitride Crystal Substrate, Method of Its Manufacture, and Group-III Nitride Semiconductor Device. US20050164419A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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