Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
文献类型：专利
| 作者 | HASKELL, BENJAMIN, A.; MCLAURIN, MELVIN, B.; DENBAARS, STEVEN, P.; SPECK, JAMES, S.; NAKAMURA, SHUJI |
| 专利号 | WO2005122267A3 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy |
| 英文摘要 | A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane gaN films are produced for use as substrates for polarization-free device growth. |
| 公开日期 | 2005-12-22 |
| 申请日期 | 2005-05-31 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43511]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | HASKELL, BENJAMIN, A.,MCLAURIN, MELVIN, B.,DENBAARS, STEVEN, P.,et al. Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy. WO2005122267A3. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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