Method of manufacturing semiconductor laser element
文献类型：专利
| 作者 | KAWATO, SHINICHI |
| 专利号 | US20060014311A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of manufacturing semiconductor laser element |
| 英文摘要 | A method of manufacturing a semiconductor laser element having an enhanced yield ratio is provided. The semiconductor laser element having a cladding layer, an intermediate layer, and a capping layer is manufactured as follows. At the laminating step, a plurality of lamination layers are laminated in a laminating direction. Subsequently, at protruding step, a cladding layer, a capping layer and a precursor of an intermediate layer are formed so that widthwise lengths of the cladding layer and the capping layer become shorter or uniform in the laminating direction, and so that the precursor of an intermediate layer protrudes widthwise from the cladding layer and the capping layer. At removing step, an protrusion of the precursor of the intermediate layer is removed. |
| 公开日期 | 2006-01-19 |
| 申请日期 | 2005-07-14 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAWATO, SHINICHI. Method of manufacturing semiconductor laser element. US20060014311A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。