Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof
文献类型：专利
| 作者 | CHEN, NAI-CHUAN; CHANG, CHIN-AN; CHANG, PEN-HSIU; SHIH, CHUAN-FENG; LIEN, WEI-CHIEH |
| 专利号 | US20070045607A1 |
| 著作权人 | CHANG GUNG UNIVERSITY |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof |
| 英文摘要 | The present invention discloses a AlGaInN nitride substrate structure using TiN as buffer layer and the manufacturing method thereof. The present invention deposits TiN having (111) surface onto the silicon substrate having (111) surface as a buffer layer, and grows III-V AlGaInN nitride epitaxy structure having (0001) surface. The present method can form high-quality III-V AlGaInN nitride epitaxy layer to manufacture the vertical-conducted III-V AlGaInN nitride devices and utilize the high-reflection TiN surface to enhance the efficiency of the opti-electrical devices. The present invention can further prevent the silicon substrate forming the noncrystalline SiNx in the AlGaInN epitaxy process, so that the yield of the chip can be improved. |
| 公开日期 | 2007-03-01 |
| 申请日期 | 2005-08-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43515]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CHANG GUNG UNIVERSITY |
| 推荐引用方式 GB/T 7714 | CHEN, NAI-CHUAN,CHANG, CHIN-AN,CHANG, PEN-HSIU,et al. Algainn nitride substrate structure using tin as buffer layer and the manufacturing method thereof. US20070045607A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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