Nitride semiconductor substrate and method of producing same
文献类型：专利
| 作者 | IRIKURA, MASATO; MOCHIDA, YASUSHI; NAKAYAMA, MASAHIRO |
| 专利号 | US20060071234A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor substrate and method of producing same |
| 英文摘要 | A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN or AlGaN layer epitaxially grown on the lapped substrate by gathering dislocations in the epi-layer to boundaries of holes, pulling the dislocations to bottoms of the holes. Higher roughness of the nitride substrate degrades morphology of an epitaxially-grown layer thereon but reduces dislocation density to a lower level. Morphology of the epi-layer contradicts the dislocation density of the epi-layer. The nitride semiconductor substrate can reduce dislocation density and can be low cost and useful substrates. |
| 公开日期 | 2006-04-06 |
| 申请日期 | 2005-11-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43517]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | IRIKURA, MASATO,MOCHIDA, YASUSHI,NAKAYAMA, MASAHIRO. Nitride semiconductor substrate and method of producing same. US20060071234A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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