Nitride semiconductor light-emitting device and method for producing same
文献类型：专利
| 作者 | TAKAKURA, TERUYOSHI; ITO, SHIGETOSHI; KAMIKAWA, TAKESHI |
| 专利号 | US20060131590A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor light-emitting device and method for producing same |
| 英文摘要 | In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking. |
| 公开日期 | 2006-06-22 |
| 申请日期 | 2005-12-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43521]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKAKURA, TERUYOSHI,ITO, SHIGETOSHI,KAMIKAWA, TAKESHI. Nitride semiconductor light-emitting device and method for producing same. US20060131590A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。