Semiconductor laser device of III-V group compound and fabrication method therefor
文献类型：专利
| 作者 | HOSOBA, HIROYUKI |
| 专利号 | US20060134816A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device of III-V group compound and fabrication method therefor |
| 英文摘要 | A semiconductor laser device of a III-V group compound includes a substrate including a main surface having an inclination angle of less than 20° toward a [011] direction from a (100) plane and an inclined facet further inclined toward the [011] direction from the main surface, a light emitting stacked-layered portion including at least an active layer and a clad layer over the substrate, and a current-constricting layer including a IV group impurity. The current-constricting layer has a region of an n type conductivity above the main surface of the substrate, and a region of a p type conductivity above the inclined facet of the substrate. |
| 公开日期 | 2006-06-22 |
| 申请日期 | 2006-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43522]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | HOSOBA, HIROYUKI. Semiconductor laser device of III-V group compound and fabrication method therefor. US20060134816A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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