Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer
文献类型：专利
| 作者 | NAKAHARA, KEN; TAMURA, KENTARO |
| 专利号 | US20080308836A1 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer |
| 英文摘要 | There are provided a nitride semiconductor device such as a nitride semiconductor light emitting device, a transistor device or the like, obtained by forming a buffer layer of a single crystal of the nitride semiconductor, in which both a-axis and c-axis are aligned, directly on a substrate lattice-mismatched with the nitride semiconductor without forming an amorphous low temperature buffer layer, and growing epitaxially the nitride semiconductor layer on the buffer layer of the single crystal. In this device, a single crystal buffer layer (2), made of a single crystal of AlxGayIn1-x-yN (0≦x≦1, 0≦y≦1 and 0≦x+y≦1), in which a-axis and c-axis are aligned, is directly formed on a substrate (1) lattice-mismatched with nitride semiconductor, and a nitride semiconductor layer (3) is epitaxially grown on the buffer layer (2) of the single crystal. The buffer layer of the single crystal can be formed by the use of a PLD method. |
| 公开日期 | 2008-12-18 |
| 申请日期 | 2006-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43523]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | NAKAHARA, KEN,TAMURA, KENTARO. Nitride Semiconductor Device and Method for Growing Nitride Semiconductor Crystal Layer. US20080308836A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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