Surface-emitting semiconductor laser comprising a structured waveguide
文献类型：专利
| 作者 | ORTSIEFER, MARKUS |
| 专利号 | US20060249738A1 |
| 著作权人 | VERTILAS GMBH |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface-emitting semiconductor laser comprising a structured waveguide |
| 英文摘要 | A surface-emitting semiconductor laser includes an active zone, the active zone having a p-n-junction and surrounded by a first n-doped semiconductor layer and at least one p-doped semiconductor layer; a tunnel contact layer on the p-side of the active zone; an n-doped current-carrying layer that covers the tunnel contact layer, the n-doped current-carrying layer comprising a raised portion; and a structured layer having an optical thickness at least equal to the optical thickness of the current-carrying layer in the region of the raised portion, wherein the structured layer is disposed on the current-carrying layer within a maximum distance of 2 μm from the raised portion. |
| 公开日期 | 2006-11-09 |
| 申请日期 | 2006-04-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43526]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VERTILAS GMBH |
| 推荐引用方式 GB/T 7714 | ORTSIEFER, MARKUS. Surface-emitting semiconductor laser comprising a structured waveguide. US20060249738A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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