Quantum well lasers with strained quantum wells and dilute nitride barriers
文献类型：专利
| 作者 | MAWST, LUKE J.; TANSU, NELSON; YEH, JENG-YA |
| 专利号 | US20070248135A1 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well lasers with strained quantum wells and dilute nitride barriers |
| 英文摘要 | In accordance with the present invention, GaAs-based optoelectronic devices have an active region that includes a well layer composed of a compressively-strained semiconductor that is free, or substantially free, of nitrogen disposed between two barrier layers composed of a nitrogen- and indium-containing semiconductor. |
| 公开日期 | 2007-10-25 |
| 申请日期 | 2006-04-19 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | MAWST, LUKE J.,TANSU, NELSON,YEH, JENG-YA. Quantum well lasers with strained quantum wells and dilute nitride barriers. US20070248135A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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