Layer growth using metal film and/or islands
文献类型：专利
| 作者 | GASKA, REMIGIJUS; ZHANG, JIANGPING; SHUR, MICHAEL |
| 专利号 | WO2007002028A3 |
| 著作权人 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Layer growth using metal film and/or islands |
| 英文摘要 | A solution for manufacturing a nitride-based heterostructure, semiconductor; device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-Ill nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-Ill metal film on the surface in a substantially nitrogen-free atmosphere. The group-Ill metal film is grown such that it covers substantially an entire area of the surface. Next, the group-Ill metal film is nitridated to form a group-Ill nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-Ill nitride film. The islands can be used to subsequent group-Ill nitride growth to form the group-Ill nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics. |
| 公开日期 | 2007-12-13 |
| 申请日期 | 2006-06-20 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43530]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SENSOR ELECTRONIC TECHNOLOGY, INC. |
| 推荐引用方式 GB/T 7714 | GASKA, REMIGIJUS,ZHANG, JIANGPING,SHUR, MICHAEL. Layer growth using metal film and/or islands. WO2007002028A3. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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