Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same
文献类型：专利
| 作者 | KIM, MI-YANG; KWAK, JOON-SEOP |
| 专利号 | US20060252165A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same |
| 英文摘要 | A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device comprises a transparent substrate, an electron injection layer having first and second regions on the transparent substrate, an active region formed on the first region, a hole injection layer on the active layer, a first electrode structure on the second region, and a second electrode structure on the hole injection layer, and comprises a first layer including nitrogen and a second layer including Pd. The low contact resistance and high reflectance can be obtained by forming a trivalent compound layer composed of Pa—Ga—N at an interface between the hole injection layer, which is composed of p-GaN, and the metal layer of the p-type electrode. |
| 公开日期 | 2006-11-09 |
| 申请日期 | 2006-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43531]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIM, MI-YANG,KWAK, JOON-SEOP. Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same. US20060252165A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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