Group-III nitride based laser diode and method for fabricating same
文献类型：专利
| 作者 | DENBAARS, STEVEN; NAKAMURA, SHUJI; HANSEN, MONICA |
| 专利号 | US20080112453A1 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group-III nitride based laser diode and method for fabricating same |
| 英文摘要 | A laser diode comprising a first separate confinement heterostructure and an active region on the first separate confinement heterostructure. A second separate confinement heterostructure is on the active region and one or more epitaxial layers is on the second separate confinement heterostructure. A ridge is formed in the epitaxial layers with a first mesa around the ridge. The first mesa is 0.1 to 0.2 microns above the second confinement heterostructure. |
| 公开日期 | 2008-05-15 |
| 申请日期 | 2006-11-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43545]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | DENBAARS, STEVEN,NAKAMURA, SHUJI,HANSEN, MONICA. Group-III nitride based laser diode and method for fabricating same. US20080112453A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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