Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor Device
文献类型：专利
| 作者 | NANIWAE, KOICHI; MASUMOTO, ICHIRO |
| 专利号 | US20090257467A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor Device |
| 英文摘要 | A laser diode 300 includes a p-type GaN guide layer 107, a current confinement layer 314 provided on the p-type GaN guide layer 107 and having an opening 314A formed therein, and a p-type cladding layer 108 provided on the current confinement layer 314 and plugging the opening 314A formed in the current confinement layer 314. An interface between the p-type cladding layer 108 and the p-type GaN guide layer 107 is located in a bottom of the opening 314A. The current confinement layer 314 is a layer of a group III nitride semiconductor, and a width dimension of the opening 314A is minimized in the upper side of the opening 314A. |
| 公开日期 | 2009-10-15 |
| 申请日期 | 2006-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43547]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | NANIWAE, KOICHI,MASUMOTO, ICHIRO. Group III Nitride Semiconductor Device and Method for Manufacturing Group III Nitride Semiconductor Device. US20090257467A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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