中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor element and method for manufacturing semiconductor element

文献类型:专利

作者KATO, TOMOAKI
专利号US20090267195A1
著作权人NEC CORPORATION
国家美国
文献子类发明申请
其他题名Semiconductor element and method for manufacturing semiconductor element
英文摘要A semiconductor device of present invention comprises a layered structure including a cladding layer with a first conductivity, an active layer, and a cladding layer with a second conductivity which are successively grown on a semiconductor substrate of (001) orientation, and an embedding layer covering both side surfaces of the layered structure in a widthwise direction across a longitudinal direction of the layered structure in a plane parallel to a surface of the semiconductor substrate. A portion of side surfaces of the active layer in the widthwise direction lies parallel to at least (010) or (100) surface.
公开日期2009-10-29
申请日期2006-12-19
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/43548]  
专题半导体激光器专利数据库
作者单位NEC CORPORATION
推荐引用方式
GB/T 7714
KATO, TOMOAKI. Semiconductor element and method for manufacturing semiconductor element. US20090267195A1.

入库方式: OAI收割

来源:西安光学精密机械研究所

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