Semiconductor element and method for manufacturing semiconductor element
文献类型：专利
| 作者 | KATO, TOMOAKI |
| 专利号 | US20090267195A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor element and method for manufacturing semiconductor element |
| 英文摘要 | A semiconductor device of present invention comprises a layered structure including a cladding layer with a first conductivity, an active layer, and a cladding layer with a second conductivity which are successively grown on a semiconductor substrate of (001) orientation, and an embedding layer covering both side surfaces of the layered structure in a widthwise direction across a longitudinal direction of the layered structure in a plane parallel to a surface of the semiconductor substrate. A portion of side surfaces of the active layer in the widthwise direction lies parallel to at least (010) or (100) surface. |
| 公开日期 | 2009-10-29 |
| 申请日期 | 2006-12-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43548]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | KATO, TOMOAKI. Semiconductor element and method for manufacturing semiconductor element. US20090267195A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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