Nitride-based semiconductor light-emitting device and method of manufacturing the same
文献类型：专利
| 作者 | YOON, SUK-HO; SONE, CHEOL-SOO; LEE, JEONG-WOOK; KIM, JOO-SUNG |
| 专利号 | US20070202624A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride-based semiconductor light-emitting device and method of manufacturing the same |
| 英文摘要 | A nitride-based semiconductor light-emitting device having an improved structure to enhance light extraction efficiency, and a method of manufacturing the same are provided. The method includes the operations of sequentially forming an n-clad layer, an active layer, and a p-clad layer on a substrate; forming a plurality of masking dots on an upper surface of the p-clad layer; forming a p-contact layer having a rough surface on portions of the p-clad layer between the masking dots; forming a rough n-contact surface of the n-clad layer having the same rough shape as the rough shape of the p-contact layer by dry-etching from a portion of the upper surface of the p-contact layer to a desired depth of the n-clad layer; forming an n-electrode on the rough n-contact surface; and forming a p-electrode on the p-contact layer. |
| 公开日期 | 2007-08-30 |
| 申请日期 | 2007-01-04 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43549]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | YOON, SUK-HO,SONE, CHEOL-SOO,LEE, JEONG-WOOK,et al. Nitride-based semiconductor light-emitting device and method of manufacturing the same. US20070202624A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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