Method for growth of semipolar (al,in,ga,b)n optoelectronic devices
文献类型：专利
| 作者 | ZHONG HONG; KAEDING JOHN FRANCIS; SHARMA RAJAT; SPECK JAMES STEPHEN; DENBAARS STEVEN P; NAKAMURA SHUJI |
| 专利号 | WO2007098215A8 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for growth of semipolar (al,in,ga,b)n optoelectronic devices |
| 英文摘要 | A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes. |
| 公开日期 | 2007-11-08 |
| 申请日期 | 2007-02-20 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43551]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | ZHONG HONG,KAEDING JOHN FRANCIS,SHARMA RAJAT,et al. Method for growth of semipolar (al,in,ga,b)n optoelectronic devices. WO2007098215A8. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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