Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device
文献类型：专利
| 作者 | ISHIBASHI, KEIJI; IRIKURA, MASATO; NAKAHATA, SEIJI |
| 专利号 | US20080057608A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device |
| 英文摘要 | A manufacturing method of a group III nitride substrate by which a group III nitride substrate being excellent in flatness can be obtained includes the steps of adhering a plurality of the stripe type group III nitride substrates to an abrading holder so that a stripe structure direction is perpendicular to a rotation direction of the abrading holder; and grinding, lapping and/or polishing the-substrates. |
| 公开日期 | 2008-03-06 |
| 申请日期 | 2007-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43557]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | ISHIBASHI, KEIJI,IRIKURA, MASATO,NAKAHATA, SEIJI. Manufacturing method of group III nitride substrate, group III nitride substrate, group III nitride substrate with epitaxial layer, manufacturing method of group III nitride substrate with epitaxial layer, and manufacturing method of group III nitride device. US20080057608A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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