Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method
文献类型：专利
| 作者 | HATORI, NOBUAKI; YAMAMOTO, TSUYOSHI; ARAKAWA, YASUHIKO |
| 专利号 | US20080144691A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method |
| 英文摘要 | An active layer (18) is formed over a semiconductor substrate having a pair of facets (15A, 15B) mutually facing opposite directions. An upper cladding layer (19) is formed on the active layer, having a refractive index lower than that of the active layer. A diffraction grating (25) is disposed in the upper cladding layer on both sides of a distributed feedback region in a waveguide region (22), the waveguide region extending from one facet to the other of the semiconductor substrate. End regions (22B) are defined at both ends of the waveguide region and the distributed feedback region (22A) is disposed between the end regions. Low refractive index regions (26) are disposed in the upper cladding layer on both sides of each of the end regions of the waveguide region, the low refractive index regions having a refractive index lower than that of the upper cladding layer. |
| 公开日期 | 2008-06-19 |
| 申请日期 | 2007-10-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43563]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | HATORI, NOBUAKI,YAMAMOTO, TSUYOSHI,ARAKAWA, YASUHIKO. Optical semiconductor device having diffraction grating disposed on both sides of waveguide and its manufacture method. US20080144691A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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