Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system
文献类型：专利
| 作者 | KURAMOTO, MASARU |
| 专利号 | US20080117945A1 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system |
| 英文摘要 | A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over the active layer; an electron barrier layer over the p-side optical waveguide layer; and a p-side clad layer over the electron barrier layer. A ridge stripe is formed at an upper part of the p-side optical waveguide layer, the electron barrier layer and the p-side clad layer, and the distance between the electron barrier layer and a bottom surface in areas on both sides of the ridge stripe is not less than 10 nm. |
| 公开日期 | 2008-05-22 |
| 申请日期 | 2007-11-07 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43564]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | KURAMOTO, MASARU. Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system. US20080117945A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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