Process for preparing a bonding type semiconductor substrate
文献类型：专利
| 作者 | FURUKAWA, KAZUYOSHI; AKAIKE, YASUHIKO; YOSHITAKE, SHUNJI |
| 专利号 | US20080308827A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Process for preparing a bonding type semiconductor substrate |
| 英文摘要 | The process comprises a step of growing epitaxially mixed crystals of a compound semiconductor represented by the composition formula Inx(Ga1-yAly)1-xP on a GaAs substrate 12 to form an epi-wafer having an n-type cladding layer 14 (0.45≦x≦0.50, 0≦y≦1), an active layer 15, a p-type cladding layer 16 and a cover layer 17; a step of removing the cover layer 17 by etching to expose the surface of the p-type cladding layer 16; a step of integrally joining a mirror-finished GaP substrate 11 on the p-type cladding layer 16 by placing the GaP substrate on the cladding layer at room temperature so that the mirror-finished surface of the GaP substrate may come into contact with the p-type cladding layer 16; a step of subjecting the resultant laminate to a heat treatment; a step of carrying out an etching treatment from the side of the GaAs substrate 12 to expose the n-type cladding layer 14; and a step of forming electrodes 19 on the surface of the n-type cladding layer 14 and on the back surface of the GaP substrate 11, respectively. |
| 公开日期 | 2008-12-18 |
| 申请日期 | 2008-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43568]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | FURUKAWA, KAZUYOSHI,AKAIKE, YASUHIKO,YOSHITAKE, SHUNJI. Process for preparing a bonding type semiconductor substrate. US20080308827A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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