Dual surface-roughened n-face high-brightness LED
文献类型：专利
| 作者 | MISHRA, UMESH KUMAR; GRUNDMANN, MICHAEL; DENBAARS, STEVEN P.; NAKAMURA, SHUJI |
| 专利号 | WO2008121978A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Dual surface-roughened n-face high-brightness LED |
| 英文摘要 | A light emitting diode, comprising a substrate, a buffer layer on the substrate, an active layer on the buffer layer and between an n-type layer and a p-type layer, a tunnel junction adjacent the p-type layer, and n-type contacts to the tunnel junction and the n-type layer, wherein the buffer layer, n-type layer, p-type layer, active region and tunnel junction comprise Ill-nitride material grown in a nitrogen-face (N-face) orientation. The substrate surface upon which the Ill-nitride material is deposited is patterned to provide embedded backside roughening. A top surface of the tunnel junction, which also the top surface of the Ill-nitride material, is roughened. |
| 公开日期 | 2008-10-09 |
| 申请日期 | 2008-03-31 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43570]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | MISHRA, UMESH KUMAR,GRUNDMANN, MICHAEL,DENBAARS, STEVEN P.,et al. Dual surface-roughened n-face high-brightness LED. WO2008121978A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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