METHOD FOR DEPOSITION OF (Al,In,Ga,B)N
文献类型：专利
| 作者 | IZA, MICHAEL; DENBAARS, STEVEN P.; NAKAMURA, SHUJI |
| 专利号 | US20080251802A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | METHOD FOR DEPOSITION OF (Al,In,Ga,B)N |
| 英文摘要 | A method for growing an improved quality nitride thin film on a patterned substrate is disclosed, wherein the nitride film is grown at atmospheric pressure. A nitride template is disclosed, comprising a patterned substrate and a one or more nitride layer direct growth off of the patterned substrate, comprising no lateral epitaxial overgrowth regions and a substantially coalesced surface smooth enough for subsequent deposition of light emitting device quality nitride layers onto the surface. A light emitting diode comprising the nitride film is also disclosed. |
| 公开日期 | 2008-10-16 |
| 申请日期 | 2008-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43571]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | IZA, MICHAEL,DENBAARS, STEVEN P.,NAKAMURA, SHUJI. METHOD FOR DEPOSITION OF (Al,In,Ga,B)N. US20080251802A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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