Semiconductor device and manufacturing method therefor
文献类型：专利
| 作者 | HANAMAKI, YOSHIHIKO; ONO, KENICHI; TAKEMI, MASAYOSHI; TAKADA, MAKOTO |
| 专利号 | US20080265275A1 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacturing method therefor |
| 英文摘要 | A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer. |
| 公开日期 | 2008-10-30 |
| 申请日期 | 2008-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43572]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | HANAMAKI, YOSHIHIKO,ONO, KENICHI,TAKEMI, MASAYOSHI,et al. Semiconductor device and manufacturing method therefor. US20080265275A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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