Recessed Germanium (Ge) Diode
文献类型：专利
| 作者 | YASAITIS, JOHN A.; LOWELL, LAWRENCE JAY |
| 专利号 | US20100006961A1 |
| 著作权人 | ANALOG DEVICES, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Recessed Germanium (Ge) Diode |
| 英文摘要 | A photodiode is formed in a recessed germanium (Ge) region in a silicon (Si) substrate. The Ge region may be fabricated by etching a hole through a passivation layer on the Si substrate and into the Si substrate and then growing Ge in the hole by a selective epitaxial process. The Ge appears to grow better selectively in the hole than on a Si or oxide surface. The Ge may grow up some or all of the passivation sidewall of the hole to conformally fill the hole and produce a recessed Ge region that is approximately flush with the surface of the substrate, without characteristic slanted sides of a mesa. The hole may be etched deep enough so the photodiode is thick enough to obtain good coupling efficiencies to vertical, free-space light entering the photodiode. |
| 公开日期 | 2010-01-14 |
| 申请日期 | 2008-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43576]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANALOG DEVICES, INC. |
| 推荐引用方式 GB/T 7714 | YASAITIS, JOHN A.,LOWELL, LAWRENCE JAY. Recessed Germanium (Ge) Diode. US20100006961A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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