(al,in,ga,b)n device structures on a patterned substrate
文献类型：专利
| 作者 | IZA, MICHAEL; SATO, HITOSHI; HWANG, EU JIN; DENBAARS, STEVEN P.; NAKAMURA, SHUJI |
| 专利号 | WO2009039402A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | (al,in,ga,b)n device structures on a patterned substrate |
| 英文摘要 | A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1_xN and InyGa1_yN where0 < x < 1 and 0 = y < 1, and a nitride based active region having at least one quantum well structure on the nitride interlayer. |
| 公开日期 | 2009-03-26 |
| 申请日期 | 2008-09-19 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43579]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | IZA, MICHAEL,SATO, HITOSHI,HWANG, EU JIN,et al. (al,in,ga,b)n device structures on a patterned substrate. WO2009039402A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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