Nitride-Based Light-Emitting Device and Method of Manufacturing the Same
文献类型：专利
| 作者 | SEONG, TAE-YEON; KIM, KYOUNG-KOOK; SONG, JUNE-O; LEEM, DONG-SEOK |
| 专利号 | US20090124030A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride-Based Light-Emitting Device and Method of Manufacturing the Same |
| 英文摘要 | A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth. |
| 公开日期 | 2009-05-14 |
| 申请日期 | 2008-11-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43581]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | SEONG, TAE-YEON,KIM, KYOUNG-KOOK,SONG, JUNE-O,et al. Nitride-Based Light-Emitting Device and Method of Manufacturing the Same. US20090124030A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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