Ultra-low dislocation density group iii - nitride semiconductor substrates grown via NANO-or micro-particle film
文献类型：专利
| 作者 | VARANGIS, PETROS, M.; ZHANG, LEI
|
| 专利号 | WO2009070625A1 |
| 著作权人 | NANOCRYSTAL CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Ultra-low dislocation density group iii - nitride semiconductor substrates grown via NANO-or micro-particle film |
| 英文摘要 | A high quality Group III - Nitride semiconductor crystal with ultra-low dislocation density is grown epitaxially on a substrate via a particle film with multiple vertically- arranged layers of spheres with innumerable micro- and/or nano-voids formed among the spheres. The spheres can be composed of a variety of materials, and in particular silica or silicon dioxide (SiO2). |
| 公开日期 | 2009-06-04 |
| 申请日期 | 2008-11-25 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43582]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NANOCRYSTAL CORPORATION |
| 推荐引用方式 GB/T 7714 | VARANGIS, PETROS, M.,ZHANG, LEI. Ultra-low dislocation density group iii - nitride semiconductor substrates grown via NANO-or micro-particle film. WO2009070625A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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