Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices
文献类型：专利
| 作者 | RARING, JAMES; CHAKRABORTY, ARPAN; POBLENZ, CHRISTIANE |
| 专利号 | WO2011022699A1 |
| 著作权人 | SORAA, INC. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices |
| 英文摘要 | A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns. |
| 公开日期 | 2011-02-24 |
| 申请日期 | 2010-08-20 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43588]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SORAA, INC. |
| 推荐引用方式 GB/T 7714 | RARING, JAMES,CHAKRABORTY, ARPAN,POBLENZ, CHRISTIANE. Rapid growth method and structures for gallium and nitrogen containing ultra-thin epitaxial structures for devices. WO2011022699A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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