Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers
文献类型：专利
| 作者 | ENATSU, YUUKI; GUPTA, CHIRAG; KELLER, STACIA; MISHRA, UMESH K.; AGARWAL, ANCHAL |
| 专利号 | WO2017180633A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers |
| 英文摘要 | An optoelectronic or electronic device structure, including an active region on or above a polar substrate, wherein the active region comprises a polar p region. The device structure further includes a hole supply region on or above the active region. Holes in the hole supply region are driven by a field into the active region, the field arising at least in part due to a piezoelectric and/or spontaneous polarization field generated by a composition and grading of the active region. |
| 公开日期 | 2017-10-19 |
| 申请日期 | 2017-04-11 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43593]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | ENATSU, YUUKI,GUPTA, CHIRAG,KELLER, STACIA,et al. Method to achieve active p-type layer/layers in iii-nitride epitaxial or device structures having buried p-type layers. WO2017180633A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。