Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth
文献类型：专利
| 作者 | KAMIKAWA, TAKESHI; GANDROTHULA, SRINIVAS; LI, HONGJIAN |
| 专利号 | WO2019191760A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth |
| 英文摘要 | A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask. The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about -47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers. |
| 公开日期 | 2019-10-03 |
| 申请日期 | 2019-04-01 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43595]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | KAMIKAWA, TAKESHI,GANDROTHULA, SRINIVAS,LI, HONGJIAN. Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth. WO2019191760A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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