Semiconductor photo bistable element
文献类型：专利
| 作者 | KIKUSHIMA KOJI; SANO KOICHI; OKADA KENJI |
| 专利号 | JP1986026279A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor photo bistable element |
| 英文摘要 | PURPOSE:To make the selection of characteristics free by a method wherein an active layer and a waveguide layer which photocouples it to which current can be independently injected each are provided in a Fabry-Perot resonator, and a level current of less than the laser oscillation threshold value is passed to the active layer, whereas the refractive index of the waveguide layer is varied with the injected current. CONSTITUTION:The active layer 23 made of AlGaAs and the waveguide layer 33 made of AlGaAs of low loss to incidence light beams 14 are formed by lamination and cut in a vertical direction into the coupling part 36. Next, semiconductor layers 21 and 31 of smaller refractive index and the same conductivity type are adhered above the layer 33 by holding the coupling part 36 therebetween, and semiconductor layers 22 and 32 of reverse conductivity type are adhered on the layer 23 side. Thereafter, a bias circuit 26 is connected to the layer 21 via stabilizing coil 27, and a bias circuit 34 to the layer 31 via stabilizing coil 35; then, the layers 22 and 32 are grounded. Light beams 14 are thus made incident to the incidence end 24 of the layer 21 via condenser lens 28, and light beams 16 are emitted out of the emission end surface 25 of the layer 31 via collimator lens 29. |
| 公开日期 | 1986-02-05 |
| 申请日期 | 1984-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43596]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KIKUSHIMA KOJI,SANO KOICHI,OKADA KENJI. Semiconductor photo bistable element. JP1986026279A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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