Semiconductor optical modulator and manufacture thereof
文献类型：专利
| 作者 | MIYAZAWA TAKEO; WAKITA KOICHI; NAGANUMA MITSURU |
| 专利号 | JP1992010483A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical modulator and manufacture thereof |
| 英文摘要 | PURPOSE:To contrive an advance in efficiency of a modulator by eliminating a difference in level between a semiconductor layer for an active layer and that for a photoabsorption layer in a semiconductor optical modulator. CONSTITUTION:A diffraction grating for distribution feedback 2 is formed in a region under a first semiconductor lamination part 3L, and then a semiconductor layer for clad 4, a non-mixed crystal region 15L of a semiconductor layer 15 comprising a quantum well structure, a semiconductor layer for clad layer 6, and a semiconductor layer for cap layer 7 are laminated in this order. A power source is connected between a first electrode layer 8L and a fifth electrode layer 9 of alight source part L, a laser oscillation of a wavelength determined by a period of the diffraction grating 2 (for example, 55mum) can be obtained and is introduced into a mixed crystal region 15M of a second semiconductor lamination part 3M which composes an optical modulation part M. A modulated voltage is applied between the electrode layers 8M and 9 of the optical modulation part M in order to obtain a modulated light. Because there is no difference in level between the non-mixed crystal region 15L and a mixed crystal region 15M, the modulated light is more intensive remarkably compared with a conventional one. |
| 公开日期 | 1992-01-14 |
| 申请日期 | 1989-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43600]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MIYAZAWA TAKEO,WAKITA KOICHI,NAGANUMA MITSURU. Semiconductor optical modulator and manufacture thereof. JP1992010483A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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