Semiconductor light-emitting device and manufacture thereof
文献类型：专利
| 作者 | HOSOI YOJI; KOBAYASHI MASAO; TSUBOTA TAKASHI; KASHIMA YASUMASA |
| 专利号 | JP1991125488A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To provide a high-quality device by forming a current block layer of one conductivity type on a semiconductor substrate and forming a diffused current path of the opposite conductivity type so as to eliminate both poor reproducibility of etched V-grooves and the degradation in quality and yield due to contamination during dry etching. CONSTITUTION:A p-InP buffer layer 12, an n-InP current block layer 13, and a p-InP clad layer 15 are sequentially deposited on a p-InP substrate 11 in a first step of vapor phase epitaxy. A dielectric film 31 of SiO2 or PSG is formed on the p-InP clad layer 15. The dielectric film is shaped into stripes by photo-lithographic etching. A p-type impurity is introduced to the n-InP current block layer 13 through those portions of the p-InP clad layer 15 where the dielectric film is removed. The impurity creates a current path in part of the n-InP current block layer 13. Then, all the dielectric film is removed. A second step of vapor phase epitaxy is performed to sequentially form an active p-InGaAsP layer 16, an n-InP clad layer 17, and an n-InGaAsP contact layer 18 on the P-InP clad layer 15. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43602]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSOI YOJI,KOBAYASHI MASAO,TSUBOTA TAKASHI,et al. Semiconductor light-emitting device and manufacture thereof. JP1991125488A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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