Processing semiconductor crystal and manufacture of semiconductor device using the same
文献类型：专利
| 作者 | ITO KAZUHIRO; NAKAMURA HITOSHI |
| 专利号 | JP1990119195A |
| 著作权人 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Processing semiconductor crystal and manufacture of semiconductor device using the same |
| 英文摘要 | PURPOSE:To form a semiconductor crystal easily and with high reproducibility by a method wherein plastic deformation is created in semiconductor crystal layers to form domains and the crystal is subjected to a thermal treatment at a required temperature. CONSTITUTION:A plurality of semiconductor crystal layers 2-5 which are composed of at least one type of semiconductor layers made of group IV elements, or III-V, II-V or IV-IV compound semiconductor and have compositions or impurity concentrations different from each other are built up on a required substrate 1 by epitaxial growth to form a laminated structure. The laminated structure is heated so as to be almost softened and stresses are applied to the specific and more than one directions to create plastic deformation to form dislocation-type domains 6, 7.... The widths W, lengths L and shift height H can be controlled by the thicknesses of the crystals, the weight for processing and the temperature. Then, if a thermal treatment is performed, crystal defects existing between the respective domains 6, 7... are erased by the rearrangement of constituting atoms to realize a no-defect state and the layers 2 and 4 are isolated into quantum well fine lines 9, 10..., so that a semiconductor crystal can be formed easily and with high reproducibility. |
| 公开日期 | 1990-05-07 |
| 申请日期 | 1988-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43604]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HIKARI GIJUTSU KENKYU KAIHATSU KK |
| 推荐引用方式 GB/T 7714 | ITO KAZUHIRO,NAKAMURA HITOSHI. Processing semiconductor crystal and manufacture of semiconductor device using the same. JP1990119195A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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