Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TSUCHIYA TOMONOBU; UOMI KAZUHISA; KAYANE NAOKI |
| 专利号 | JP1991030483A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To decrease a semiconductor laser in parasitic capacitance through a simple and self-aligned processing method by a method wherein an electrode pattern is formed, and a buried layer is removed as far as near a mesa with an etching solution composed of phosphoric acid and hydrochloric acid using the electrode pattern as a mask. CONSTITUTION:A multilayered film composed of an n-InGaAsP clad layer 2, a non-doped InGaAsP active layer 3, a p-InGaAsP anti-meltback layer 4, a p-InP clad layer 5, and an non-doped InGaAsP cap layer 6 is grown on an n-InP substrate 1, and an inverted mesa structure is formed through Br and methanol. Then, buried layers are formed of a p-InP 7 and an n-InP 8, ZnP2 is diffused using an SiO2 insulating film 9 as a mask, Au/Cr is evaporated to form a p-electrode 10, which is alloyed, and an electrode pattern is formed. Then, the SiO2 film is removed, and the InP buried layers are removed with a phosphoric acid-hydrochoric acid solution. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUCHIYA TOMONOBU,UOMI KAZUHISA,KAYANE NAOKI. Semiconductor laser and manufacture thereof. JP1991030483A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。