Electrode formation in semiconductor laser
文献类型：专利
| 作者 | WATANABE TSUTOMU; SEKINE MAMORU; ITOU TATSUYA; HASHIMOTO HIROKAZU |
| 专利号 | JP1985249382A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Electrode formation in semiconductor laser |
| 英文摘要 | PURPOSE:To form electrodes of good adhesion with the p-layer stripe and with the insulation layer by a simple process by a method wherein an ohmic electrode is formed on a p-layer stripe, and next an overcoat electrode on the upper surface of the substrate. CONSTITUTION:Au/Zn 12 of good adhesion with a p-layer stripe 7a and capable of ohmic resistance is evaporated on the upper surface of a clad layer 7, and Au/Sn 13 on the lower surface. The stripe 7a is coated with a resist 14, and next the Au/Zn 12a (ohmic electrode) is formed by removing the Au/Zn 12 through etching. After exfoliation of the resist 14, a Cr/Au 16 (overcoat electrode) of good adhesion with an SiO2 layer 9 is evaporated on the upper surface of the clad layer 7, and a Cr/Au 17 on the lower surface, resulting in the production of a semiconductor laser. |
| 公开日期 | 1985-12-10 |
| 申请日期 | 1984-05-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43617]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | WATANABE TSUTOMU,SEKINE MAMORU,ITOU TATSUYA,et al. Electrode formation in semiconductor laser. JP1985249382A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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