Distributed reflection semiconductor laser
文献类型：专利
| 作者 | HASHIMOTO HIROKAZU; SUEMATSU YASUHARU |
| 专利号 | JP1987221183A |
| 著作权人 | SHINGIJUTSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser |
| 英文摘要 | PURPOSE:To easily form a laser structure into the optimum one by a method wherein the matching of the active waveguide layer to the external waveguide layer is adjusted by an insertion layer formed on the prescribed region on the substrate and the generation of a metalback in the active waveguide layer is favorably prevented by the protective layer. CONSTITUTION:An insertion layer 15 is provided between an N-type InP substrate 1 and an active waveguide layer 3 and is constituted of an N-type InGaAsP layer of lambdag=0-35. This active waveguide layer 3 is constituted of an InGaAsP layer of a thickness of 0.1mum and lambdag=55mum and a protective layer 4 is constituted of a P-type InGaAsP layer of a thickness of 0.1mum and lambdag=35mum. According to this constitution, the matching of each layer can be adjusted by the insertion layer 15, as a result of which the function of the matching is stopped from being requested to the protective layer 4. Accordingly, as the condition for the matching is eliminated to the composition of the protective layer 4, the composition can be set in a composition most suitable for preventing a metalback. According to this constitution, the request for the protective layer represents a metalback preventing function only. |
| 公开日期 | 1987-09-29 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43620]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | HASHIMOTO HIROKAZU,SUEMATSU YASUHARU. Distributed reflection semiconductor laser. JP1987221183A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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