Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | YANASE TOMOO; YAMAGUCHI MASAYUKI; RANGU HIROYOSHI |
| 专利号 | JP1985045084A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To enable the oscillatin in a plane of single polarization at single axial mode by a method wherein the thickness of an active layer is set less than a specific value. CONSTITUTION:A laminated structure consisting of the active layer 13 and a wave guide layer 12 of a larger forbidden bend width is sandwiched from both sides by means of clad layers having smaller refractive indeces than the wave guide layer 12, a cap layer 15 being formed thereon, and a periodical unevennes being then provided at the boundary between the clad layer 11 and the wave guide layer 12. A semiconductor laser of such construction oscillates at single axial mode; further reduction of the thickness of the active layer 13 to an extreme degree causes the direction of movement of the carriers injected therein to be restricted in two dimensions, and the power of TE waves to strongly oscillate, thus restraining the oscillation of TM waves. When the degree of freedom of the carriers becomes two-dimensional, a large difference can be obtained in amplification degree between the TE and TM waves, and accordingly oscillation occurs in the plane of single polarization. Therefore, it is sufficient that only the active layer 13 is tinner than 450Angstrom at which a difference can be observed in amplification degree between the TE and TM waves. |
| 公开日期 | 1985-03-11 |
| 申请日期 | 1983-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43626]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | YANASE TOMOO,YAMAGUCHI MASAYUKI,RANGU HIROYOSHI. Distributed feedback type semiconductor laser. JP1985045084A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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