Manufacture of semiconductor device
文献类型：专利
| 作者 | SANDOUUADARUSHIYU |
| 专利号 | JP1990146723A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable accurate control of Al composition rate (x) of an AlxGa1-xAs layer by controlling the Al composition rate (x) of the AlxGa1-xAs layer which is deposited on a GaAs substrate through gas source molecular line epitaxial method. CONSTITUTION:When an AlxGa1-xAs layer is deposited on a GaAs substrate 16 whereon a surface of (311) A or a surface of (311) B is exposed through gas source molecular epitaxial method which supplies at least Al and Ga by gas, an Al composition rate (x) of the Al1Ga1-xAs layer is controlled by a temperature of the GaAs substrate 16. For example, if crystal growth is performed for AlxGa1-xAs on the GaAs substrate 16 by use of TEA for Al source, TEG for Ga source, and solid As for As source by using a gas source molecular line epitaxial device as illustrated, the GaAs substrate 16 is heated to a temperature which realizes a desired Al composition rate (x) to form the AlxGa1-xAs layer because of a strong correlation between the Al composition rate (x) of the formed AlxGa1-xAs and a temperature of the GaAs substrate 16. |
| 公开日期 | 1990-06-05 |
| 申请日期 | 1988-11-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43631]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | SANDOUUADARUSHIYU. Manufacture of semiconductor device. JP1990146723A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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